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FSDM1265RB
Features
Green Mode Fairchild Power Switch (FPSTM)
* Internal Avalanche Rugged Sense FET * Advanced Burst-Mode operation that consumes less than 1 W at 240VAC and 0.5W load * Precision Fixed Operating Frequency (66kHz) * Internal Start-up Circuit * Improved Pulse by Pulse Current Limiting * Over-Voltage Protection (OVP) * Over-Load Protection (OLP) * Internal Thermal Shutdown Function (TSD) * Auto-Restart Mode * Under Voltage Lock Out (UVLO) with Hysteresis * Low Operating Current (2.5mA) * Built-in Soft Start Application * SMPS (Switch Mode Power Supplies) for LCD monitor and STB * Adapter Description The FSDM1265RB is an integrated Pulse-Width Modulator (PWM) and a SenseFET which is specifically designed for high performance offline SMPS with minimal external components. This device is an integrated high-voltage power switching regulator which combines a rugged avalanche Sense FET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under-voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft-start, and precise current sources that are temperature compensated for loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size, and weight, while simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform which is well suited for cost effective designs of flyback converters. OUTPUT POWER TABLE(4)
230VAC 15%(3) PRODUCT FSDM0565RB FSDM0565RBI FSDM07652RB FSDM1265RB Adapter(1) 60W 60W 70W 90W Open Frame(2) 70W 70W 80W 110W 85-265VAC Adapter(1) 50W 50W 60W 80W Open Frame(2) 60W 60W 70W 90W
Table 1. Maximum Output Power
Notes: 1. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient. 2. Maximum practical continuous power in an open- frame design at 50C ambient. 3. 230 VAC or 100/115 VAC with doubler. 4. The junction Temperature can limit the Maximum output power.
Typical Circuit
AC IN
DC OUT
Vstr PWM Vfb
Drain
Vcc
Source
Figure 1. Typical Flyback Application
FPSTM is a trademark of Fairchild Semiconductor Corporation. (c)2005 Fairchild Semiconductor Corporation
Rev.1.0.0
FSDM1265RB
Internal Block Diagram
Vcc 3 N.C 5 0.38/ 0.49V
+
Vstr 6
Drain 1
Istart
Vref 8V/12V Vcc good Internal Bias
Vcc Idelay Vref
OSC IFB
2.5R
PWM
S Q
FB 4
R Q
Soft start
R
Gate driver LEB
VSD Vcc
S Q
2 GND
Vovp TSD Vcc good
R Q
VCL
Figure 2. Functional Block Diagram of FSDM1265RB
2
FSDM1265RB
Pin Definitions
Pin Number 1 2 3 Pin Name Drain GND Vcc Pin Function Description This pin is the high voltage power Sense FET drain. It is designed to drive the transformer directly. This pin is the control ground and the Sense FET source. This pin is the positive supply voltage input. During startup, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from the auxiliary transformer winding. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. Once the pin reaches 6.0V, the overload protection is activated resulting in the shutdown of the FPSTM. This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal current source is disabled.
4 5 6
Vfb N.C Vstr
Pin Configuration
TO-220F-6L
6.Vstr 5.N.C. 4.Vfb 3.Vcc 2.GND 1.Drain
Figure 3. Pin Configuration (Top View)
3
FSDM1265RB
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified) Parameter Drain-source Voltage Vstr Max. Voltage Pulsed Drain Current (Tc=25C)
(1)
Symbol VDSS VSTR IDM ID VCC VFB PD Tj TA TSTG
-
Value 650 650 15.9 5.3 3.4 20 -0.3 to VCC 50 Internally limited -25 to +85 -55 to +150 2.0 (GND-Vstr/Vfb=1.5kV) 300 (GND-Vstr/Vfb=225V)
Unit V V ADC A A V V W C C C kV V
Continuous Drain Current(Tc=25C) Continuous Drain Current(Tc=100C) Supply Voltage Input Voltage Range Total Power Dissipation (Tc=25C with Infinite Heat Sink) Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range ESD Capability, HBM Model (All Pins except for Vstr and Vfb) ESD Capability, Machine Model (All Pins except for Vstr and Vfb)
Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature
Thermal Impedance
Parameter Junction-to-Case Thermal Symbol Package TO-220F-6L Value 2.5 Unit C/W
JC(1)
Notes: 1. Infinite cooling condition - Refer to the SEMI G30-88.
4
FSDM1265RB
Electrical Characteristics
(Ta = 25C unless otherwise specified) Parameter Sense FET SECTION Drain-source breakdown voltage BVDSS VGS = 0V, ID = 250A VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS VDS= 520V VGS = 0V, TC = 125C VGS = 10V, ID = 2.5A VGS = 0V, VDS = 25V, f = 1MHz 650 VDD= 325V, ID= 5A 0.75 78 42 106 330 110 500 500 0.9 ns V A A
Symbol
Condition
Min.
Typ.
Max.
Unit
Static drain source on resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time CONTROL SECTION Initial frequency Voltage stability Temperature stability (1) Maximum duty cycle Minimum duty cycle Start threshold voltage Stop threshold voltage Feedback source current Soft-start time Leading edge blanking time BURST MODE SECTION Burst mode voltages(1)
RDS(ON) COSS TD(ON) TR TD(OFF) TF
pF
FOSC FSTABLE FOSC DMAX DMIN VSTART VSTOP IFB TS TLEB
VFB = 3V 13V Vcc 18V -25C Ta 85C VFB=GND VFB=GND VFB=GND Vfb=3 -
60 0 0 77 11 7 0.7 -
66 1 5 82 12 8 0.9 10 250
72 3 10 87 0 13 9 1.1 15 -
kHz % % % % V V mA ms ns
VBURH VBURL
Vcc=14V Vcc=14V
0.3 0.39
0.38 0.49
0.46 0.59
V V
5
FSDM1265RB
Electrical Characteristics (Continued)
(Ta = 25C unless otherwise specified) Parameter PROTECTION SECTION Peak current limit (2) Over voltage protection (OVP) Thermal shutdown temperature (1) Shutdown feedback voltage Shutdown delay current TOTAL DEVICE SECTION IOP Operating supply current
(3)
Symbol
Condition
Min.
Typ.
Max.
Unit
IOVER VOVP TSD VSD IDELAY
VFB=5V, VCC=14V -
3.0 18 130
3.4 19 145 6.0 3.5
3.8 20 160 6.5 4.2
A V C V A
VFB 5.5V VFB=5V
5.5 2.8
VFB=GND, VCC=14V VFB=GND, VCC=10V VFB=GND, VCC=18V 2.5 5 mA
IOP(MIN) IOP(MAX)
Notes: 1. These parameters, although guaranteed at the design level, are not tested in mass production. 2. These parameters indicate the inductor current. 3. This parameter is the current flowing into the control IC.
6
FSDM1265RB
Comparison of FS6M12653RTC and FSDM1265RB
Function Soft-Start FS6M12653RTC Adjustable soft-start time using an external capacitor FSDM1265RB FSDM1265RB Advantages Typical Internal soft- * Gradually increasing current limit start of 10ms (fixed) during soft-start reduces peak current and voltage component stresses * Eliminates external components used for soft-start in most applications * Reduces or eliminates output overshoot
Burst Mode Operation
* Built into controller * Built into controller * Improves ight-load efficiency * Output voltage fixed * Reduces no-load consumption * Output voltage drops to about half
7
FSDM1265RB
Typical Performance Characteristics
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0
1.2 1.0 Operating Frequency (Normalized to 25) 0.8 0.6 0.4 0.2 0.0
-50 -25 0 25 50 75 100 125
Operating Current (Normalized to 25)
0.8 0.6 0.4 0.2 0.0 Junc tion Temperature()
-50
-25
0
25
50
75
100
125
Ju n ction Temperatu re()
Operating Current vs. Temperature
Operating Freqency vs. Temperature
1.2 1.0 Start Thershold Voltage (Normalized to 25)
Stop Threshold Voltage (Normalized to 25)
1.2 1.0 0.8 0.6 0.4 0.2 0.0
0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju nc tion Te mperatu re ()
-50
-25
0
25
50
75
100
125
Junction Temperature()
Start Threshold Voltage vs. Temperature
1.2 1.0 Maximum Duty Cycle (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
FB Source Current (Normalized to 25)
Stop Threshold Voltage vs. Temperature
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tio n T e mp e ra tu re ()
Maximum Duty vs. Temperature
Feedback Source Current vs. Temperature
8
FSDM1265RB
Typical Performance Characteristics (Continued)
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tion T e mpe ra tu re ()
1.2 1.0 Shutdown Delay Current (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tion Te mpe ratu re ()
Shutdown FB Voltage (Normalized to 25)
ShutDown Feedback Voltage vs. Temperature
1.2 1.0 Over Voltage Protection (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tion Te mpe ra tu re ()
ShutDown Delay Current vs. Temperature
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tion T e mpe ra tu re ()
Burst Mode Enable Voltage (Normalized to 25)
Over Voltage Protection vs. Temperature
Current Limit VS. Temperature
1.2 1.0 Current Limit (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju nc tion Te mpe ratu re ()
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju n c tion T e mpe ratu re ()
Burst Mode Enable Voltage vs. Temperature
Burst Mode Disable Voltage (Normalized to 25)
Burst Mode Disable Voltage vs. Temperature
9
FSDM1265RB
Typical Performance Characteristics (Continued)
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0 Soft Start Time (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju nc tion Te mpe ratu re ()
Soft-start Time vs. Temperature
10
FSDM1265RB
Functional Description
1. Star-tup: In previous generations of Fairchild Power Switches (FPSTM), the Vcc pin had an external start-up to the DC input voltage line. In the newer switches, the startup resistor is replaced by an internal high voltage current source. At startup, an internal high voltage current source supplies the internal bias and charges the external capacitor (Cvcc) that is connected to the Vcc pin as illustrated in Figure 4. When the Vcc pin reaches 12V, the FSDM1265RB begins switching and the internal high voltage current source is disabled. Then, the FSDM1265RB continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless Vcc goes below the stop voltage of 8V.
2.1 Pulse-by-pulse current limit: Because current mode control is employed, the peak current through the Sense-FET is limited by the inverting input of PWM comparator (Vfb*) as shown in Figure 5. Assuming that the 0.9mA current source flows only through the internal resistor (2.5R +R= 2.8 k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (Vfb) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping Vfb*. Therefore, the peak value of the current through the Sense FET is limited.
VDC CVcc
2.2 Leading edge blanking (LEB): When the internal Sense FET is turned on, usually the reverse recovery of the primary-side capacitance and the secondary-side rectifier causes a high current spike through the SenseFET. causes Excessive voltage across the Rsense resistor can lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FSDM1265RB employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (TLEB) after the SenseFET is turned on.
Vcc 3 6
Vstr
Vcc Vref IFB
OSC
Istart
Vref 8V/12V Vcc good Internal Bias
Vo Vfb
H11A817A
CB
Idelay
4 D1 D2 2.5R + Vfb*
SenseFET
R
Gate driver
KA431
-
Figure 4. Internal startup circuit
VSD
OLP
Rsense
Figure 5. Pulse width modulation (PWM) circuit
2. Feedback Control: FSDM1265RB employs current mode control, as shown in Figure 5. An opto-coupler (such as the H11A817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor in addition to the offset voltage makes it possible
to control the switching duty cycle. When the reference pin voltage of the KA431 exceeds the internal reference voltage of 2.5V, the H11A817A LED current increases, thereby pulling down the feedback voltage and reducing the duty cycle. Typically this happens when the input voltage is increased or the output
3. Protection Circuit: The FSDM1265RB has several self protective functions such as overload protection (OLP), over
voltage protection (OVP) and thermal shutdown (TSD). Because these protection circuits are fully integrated into the IC without external components, the reliability can be improved without increasing cost. Once the fault condition occurs, switching is terminated and the SenseFET remains off. This causes Vcc to fall. When Vcc reaches the UVLO stop voltage (8V), the protection is reset and the internal high voltage current source charges the Vcc capacitor via the Vstr pin. When the Vcc reaches the UVLO start voltage (12 V), the FSDM1265RB resumes its normal operation. Thus, the auto-restart alternately enables and disables the switching of the power SenseFET until the fault condition is eliminated
load is decreased.
(see Figure 6).
11
FSDM1265RB
Vds
Power on
Fault occurs
VFB
Fault removed
6.0V
Over load protection
2.5V
Vcc
T 12= Cfb*(6.0-2.5)/Idelay
12V 8V
T1
T2
t
Figure 7. Over Load Protection
t
Normal operation Fault situation Normal operation
3.2 Over voltage Protection (OVP): If the secondary side feedback circuit malfunctions or a solder defect causes an open in
the feedback path, the current through the opto-coupler transistor becomes almost zero. Then, Vfb climbs up in a similar manner to the over load situation forcing the pre-set maximum current to be supplied to the SMPS until the OLP is activated. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the OLP is activated, resulting in the breakdown of the devices in the secondary side. In order to prevent this situation, an OVP circuit is used. Generally, Vcc is proportional to the output voltage and the FSDM1265RB uses Vcc instead of directly monitoring the output voltage. If VCC exceeds
Figure 6. Auto Restart Operation
3.1 Over Load Protection (OLP): Overload occurs when the load current exceeds a pre-set level due to an unexpected event. The protection circuit (OLP) is activated to protect the SMPS. However, even when the SMPS is operating normally, the
OLP circuit can become activate during the load transition. To avoid this undesired operation, the OLP circuit is designed to become activate after a specified time to determine whether it is in a transient or an overload mode. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes beyond this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (Vfb). If Vfb exceeds 2.5V, D1 is blocked and the 3.5uA current source slowly starts to charge CB up to Vcc. In this condition, Vfb continues increasing until it reaches 6V. Then the switching operation terminates as shown in Figure 7. The delay time for shutdown is the time required to charge CB from 2.5V to 6.0V
19V, an OVP circuit is activated resulting in the termination of the switching operation. In order to avoid undesired activation of OVP during normal operation, Vcc should be designed to be below 19V.
3.3 Thermal Shutdown (TSD): The SenseFET and the control
IC are built in one package making it easy for the control IC to detect the heat generated by the SenseFET. When the temperature exceeds approximately 150C, the thermal shutdown is
activated. 4. Soft Start: The FSDM1265RB has an internal soft-start circuit,
which increases the PWM comparator and slowly inverts the input voltage together with the SenseFET current, after it starts up. The typical soft-start time is 10ms, The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased to smoothly establish the required output voltage. This also helps prevent transformer saturation and reduce the stress on the secondary diode during startup.
with 3.5uA. In general, a 10 ~ 50 ms delay is typical for most applications.
5. Burst operation: To minimize power dissipation in the
standby mode, the FSDM1265RB enters burst mode operation. As the load decreases, the feedback voltage decreases. As shown
12
FSDM1265RB
in Figure 8, the device automatically enters burst mode when the feedback voltage drops below VBURL(380mV). At this point switching stops and the output voltages start to drop at a rate dependent on the standby current load. This causes the feedback voltage to rise. Once it passes VBURH(490mV), switching resumes. The feedback voltage then falls and the process repeats. Burst mode operation alternately enables and disables switching of the power SenseFET, thereby
reducing switching loss in the Standby mode.
Vo
Vose
t
VFB
0.49V 0.38V
Ids
Vds
time
T 1
Switching disabled
T 2
T 3
Switching disabled
T 4
Figure 8. Waveforms of BurstOperation
13
FSDM1265RB
Typical Application Circuit
Application LCD Monitor Output Power 62W Input Voltage Universal input (85-265Vac) Output Voltage (Max. Current) 5V (4.0A) 12V (3.5A)
Features
* * * * * * High efficiency (>81% at 85Vac input) Low zero-load power consumption (<300mW at 240Vac input) Low standby-mode power consumption (<800mW at 240Vac input and 0.3W load) Low component count Enhanced system reliability through several protection functions Internal soft-start (10ms)
Key Design Notes
* Resistors R102 and R105 are employed to prevent start-up at low input voltage. After start-up, there is no power loss in these resistors since the start-up pin is internally disconnected after start-up. * The delay time for OLP is designed to be about 50ms with C106 of 47nF. If you require a faster triggering of OLP , reduce the C106 to 10nF. * Zener diode ZD102 is used for a safety test such as UL. When the drain pin and feedback pin are shorted, the zener diode fails and remains short, which causes the fuse (F1) to blow and prevents explosion of the opto-coupler (IC301). The zener diode also increases immunity against a line surge.
1. Schematic
D202 T1 EER3016 MBRF10100 1 C104 2.2nF 1kV 10 C201 1000uF 25V 8
L20 1 C202 1000u F 25V 12V, 3.5A
C103 200uF 400V BD101 2 2KBP06M3N257 1 3
R102 30k
R103 56k 2W
2 D101 UF 4007
3
R105 40k
IC1 FSDM1265R B 6 Vstr 1 Drain 5 NC 4 Vf b GND 2 Vcc 3 C105 D102 47uF TVR10G 50V R104 5 4 D201 MBRF1045 7 C203 1000uF 10V 5 6 L20 2 5V, 4A C204 1000u F 10V
4 C102 220nF 275VA C
ZD102 10V
C106 47nF 50V
ZD101 22V
LF101 23mH
C301 4.7nF
R201 1k R101 560k 1W R204 10k R203 12k C205 47nF
R202 1.2k IC301 H11A817A
RT1 5D-9
C101 220nF 275VA C
F1 FUSE 250V 2A
IC201 KA431
R205 10k
14
FSDM1265RB
2. Transformer Schematic Diagram
EER3016 Np/2 Np/2 1 10 9 8 N12V
2 3
4 Na 5
7N 5V 6
3.Winding Specification
No Na Np/2 N12V N5V Np/2
Pin (sf) 45 21 10 8 76 32
Wire 0.2 x 1 0.4 x 1 0.3 x 3 0.3 x 3 0.4 x 1
Turns 8 18 7 3 18
Winding Method Center Winding Solenoid Winding Center Winding Center Winding Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Outer Insulation: Polyester Tape t = 0.050mm, 2Layers
4.Electrical Characteristics
Pin Inductance Leakage Inductance 1-3 1-3
Specifications 420uH 10% 10uH Max.
Remarks 100kHz, 1V 2nd all short
5. Core & Bobbin Core: EER 3016 Bobbin: EER3016 Ae(mm2): 96
15
FSDM1265RB
6.Demo Circuit Part List
Part F101 RT101 R101 R102 R103 R104 R105 R201 R202 R203 R204 R205
Value Fuse 2A/250V NTC 5D-9 Resistor 560K 30K 56K 5 40K 1K 1.2K 12K 10K 10K
Note
Part C301
Value 4.7nF Inductor
Note Polyester Film Cap.
L201 L202 1W 1/4W 2W 1/4W 1/4W 1/4W 1/4W 1/4W 1/4W 1/4W D101 D102 D201 D202 ZD101 ZD102 BD101 Capacitor
5uH 5uH
Wire 1.2mm Wire 1.2mm
Diode UF4007 TVR10G MBRF1045 MBRF10100 Zener Diode Zener Diode Bridge Diode 2KBP06M 3N257 Line Filter LF101 IC101 IC201 IC301 23mH IC FSDM1265RB KA431(TL431) H11A817A FPSTM(12A,650V) Voltage reference Opto-coupler Wire 0.4mm Bridge Diode 22V 10V
C101 C102 C103 C104 C105 C106 C201 C202 C203 C204 C205
220nF/275VAC 220nF/275VAC 200uF/400V 2.2nF/1kV 47uF/50V 47nF/50V 1000uF/25V 1000uF/25V 1000uF/10V 1000uF/10V 47nF/50V
Box Capacitor Box Capacitor Electrolytic Capacitor Ceramic Capacitor Electrolytic Capacitor Ceramic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Ceramic Capacitor
16
FSDM1265RB
7. Layout
Figure 9. Layout Considerations for FSDM1265RB
Figure 10. Layout Considerations for FSDM1265RB
17
FSDM1265RB
Package Dimensions
TO-220F-6L(Forming)
18
FSDM1265RB
Ordering Information
Product Number FSDM1265RBWDTU
WDTu: Forming Type
Package TO-220F-6L(Forming)
Marking Code DM1265RB
BVdss 650V
Rds(on)Max
0.9
19
FSDM1265RB
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 7/27/05 0.0m 001 2005 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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